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www.irf.com 1 12/19/14 IRF7452Qpbf hexfet power mosfet v dss r ds(on) max i d 100v 0.060 4.5a typical smps topologies telecom 48v input dc-dc with half bridge primary or datacom 28v input with passive reset forward converter primary parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 4.5 i d @ t a = 70c continuous drain current, v gs @ 10v 3.6 a i dm pulsed drain current 36 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 3.5 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 8 so-8 top view 8 12 3 4 5 6 7 d d d d g s a s s a advanced process technology ultra low on-resistance n channel mosfet surface mount available in tape & reel 150c operating temperature lead-free description these hexfet ? power mosfet's in so-8 package utilize the lastest processing techniquesto achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. this surface mount so-8 can dramatically reduce board space and is also available in tape & reel. form quantity IRF7452Qtrpbf so-8 tape and reel 4000 eol 529 IRF7452Qpbf so-8 tube 95 eol 529 IRF7452Qpbf please search the eol part number on irs website for guidance base part number package type standard pack eol notice orderable part number replacement part number downloaded from: http:///
IRF7452Qpbf 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 3.4 CCC CCC s v ds = 50v, i d = 2.7a q g total gate charge CCC 33 50 i d = 2.7a q gs gate-to-source charge CCC 7.3 11 nc v ds = 80v q gd gate-to-drain ("miller") charge CCC 16 24 v gs = 10v, t d(on) turn-on delay time CCC 9.5 CCC v dd = 50v t r rise time CCC 11 CCC i d = 2.7a t d(off) turn-off delay time CCC 16 CCC r g = 6.0 t f fall time CCC 13 CCC v gs = 10v c iss input capacitance CCC 930 CCC v gs = 0v c oss output capacitance CCC 300 CCC v ds = 25v c rss reverse transfer capacitance CCC 84 CCC pf ? = 1.0mhz c oss output capacitance CCC 1370 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 170 CCC v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance CCC 280 CCC v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy CCC 200 mj i ar avalanche current CCC 4.5 a e ar repetitive avalanche energy CCC 0.25 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 2.7a, v gs = 0v t rr reverse recovery time CCC 77 120 ns t j = 25c, i f = 2.7a q rr reverse recoverycharge CCC 270 410 nc di/dt = 100a/ s diode characteristics 2.3 36 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 CCC CCC v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient CCC 0.11 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.060 v gs = 10v, i d = 2.7a v gs(th) gate threshold voltage 3.0 CCC 5.5 v v ds = v gs , i d = 250 a CCC CCC 25 a v ds = 100v, v gs = 0v CCC CCC 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 24v gate-to-source reverse leakage CCC CCC -100 na v gs = -24v i gss i dss drain-to-source leakage current parameter typ. max. units r ja maximum junction-to-ambient CCC 50 c/w thermal resistance downloaded from: http:///
IRF7452Qpbf www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 5.0 6.0 7.0 8.0 v = 50v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.5a downloaded from: http:///
IRF7452Qpbf 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 2.7a v = 20v ds v = 50v ds v = 80v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 8. maximum safe operating area 0.1 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd downloaded from: http:///
IRF7452Qpbf www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d downloaded from: http:///
IRF7452Qpbf 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.0a 3.6a 4.5a 0 4 8 12 16 20 i d , drain current (a) 0.04 0.05 0.06 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 15v v gs = 10v 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 v gs, gate -to -source voltage (v) 0.04 0.05 0.06 0.07 0.08 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 2.7a downloaded from: http:///
IRF7452Qpbf www.irf.com 7 so-8 package details so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. out line conf orms t o jedec out line ms -012aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. cont rol ling dime ns ion: mill ime t e r 3. dime ns ions are s hown in mill ime t e rs [inche s ]. 5 dime ns ion doe s not incl ude mol d pr ot r us ions . 6 dime ns ion doe s not incl ude mol d pr ot r us ions . mold prot rus ions not t o exce ed 0.25 [.010]. 7 dime ns ion is t he l e ngt h of l e ad f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o exce ed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f7101 y = last digit of the year part number lot code ww = we e k example : t his is an irf 7101 (mos f et ) p = designates lead-free product (optional) a = assembly site code

! dimensions are shown in milimeters (inches) downloaded from: http:///
IRF7452Qpbf 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) ! downloaded from: http:///
IRF7452Qpbf www.irf.com 9 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 20mh, r g = 25 , i as = 4.5a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release. msl1 (per jedec j-std-020d ?? ) rohs compliant qualification information ? qualification level industrial ? (per jedec jesd47f ?? guidelines) yes moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments 12/19/2014 ? added ordering information to reflect the end-of-life revision history downloaded from: http:///

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